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| NPN Silicon Darlington Transistor For general amplifier applications q High collector current q High current gain q SMBT 6427 Type SMBT 6427 Marking s1V Ordering Code (tape and reel) Q68000-A8320 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Total power dissipation, TS = 74 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VCE0 VCB0 VEB0 IC ICM Ptot Tj Tstg Values 40 40 12 500 800 360 150 - 65 ... + 150 Unit V mA mW C 280 210 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBT 6427 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage IC = 100 A Emitter-base breakdown voltage, IE = 10 A Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 C Collector cutoff current VCE = 30 V, IB = 0 Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V IC = 500 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 50 mA, IB = 0.5 mA IC = 500 mA, IB = 0.5 mA Base-emitter saturation voltage1) IC = 500 mA, IB = 0.5 mA Base-emitter voltage IC = 50 mA, VCE = 5 V AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 1 mA, VCE = 5 V, RS = 100 k f = 1 kHz to 15 kHz 1) Values typ. max. Unit V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 40 40 12 - - - - - - - - - - - - 50 10 1 50 V nA A A ICE0 IEB0 hFE - - nA - 10000 - 20000 - 14000 - VCEsat - - VBEsat VBE(on) - - - - - - 100000 200000 140000 V 1.2 1.5 2.0 1.75 fT Cobo Cibo NF 130 - - - - - - - - 7 25 10 MHz pF dB Pulse test conditions: t 300 s, D 2 %. Semiconductor Group 2 SMBT 6427 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 3 SMBT 6427 Base-emitter saturation voltage IC = f (VBE sat), hFE = 1000 Collector-emitter saturation voltage IC = f (VCE sat), hFE = 1000 Collector cutoff current ICB0 = f (TA) VCB = VCE max DC current gain hFE = f (IC) VCE = 5 V Semiconductor Group 4 |
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